Chengsuchuang Transistor 200V 5A IRF620B_FP001

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US $1-2 / Pieces | 1 Piece/Pieces Chengsuchuang Transistor 200V 5A IRF620B_FP001 (Min. Order)
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Quick Details
Place of Origin:
Guangdong, China (Mainland)
Brand Name:
Original Brand
Model Number:
Package Type:
Throught Hole
Chengsuchuang Transistor 200V 5A IRF620B_FP001
Supply Ability
Supply Ability:
100000 Piece/Pieces per Month Chengsuchuang Transistor 200V 5A IRF620B_FP001
Packaging & Delivery
Packaging Details
In Bulk Package
Lead Time :
2 days after order confirmed

Chengsuchuang Transistor 200V 5A IRF620B_FP001

FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 390pF @ 25V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 47W (Tc)
Rds On (Max) @ Id, Vgs 800 mOhm @ 2.5A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3


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